XM116资料

CORPORATIONDiode Protected N-ChannelEnhancement Mode MOSFETGeneral Purpose AmplifierM116FEATURES

•Low IGSS

•Integrated Zener Clamp for Gate Protection

PIN CONFIGURATIONABSOLUTE MAXIMUM RATINGS(TA = 25oC unless otherwise specified)

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30VGate to Drain Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . 30VDrain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mAGate Zener Current. . . . . . . . . . . . . . . . . . . . . . . . . . . ±0.1mAStorage Temperature Range. . . . . . . . . . . . . -65oC to +200oCOperating Temperature Range. . . . . . . . . . . -55oC to +125oCLead Temperature (Soldering, 10sec). . . . . . . . . . . . . +300oCPower Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW Derate above 25oC. . . . . . . . . . . . . . . . . . . . . . . 2.2mW/oC

NOTE: Stresses above those listed under \"Absolute MaximumRatings\" may cause permanent damage to the device. These arestress ratings only and functional operation of the device at these orany other conditions above those indicated in the operational sectionsof the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.

TO-72CSGD1003ZORDERING INFORMATIONPart

1DEVICE SCHEMATICPackage

Hermetic TO-72

Sorted Chips in Carriers

Temperature Range-55oC to +125oC-55oC to +125oC

M116XM116

2340330ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)

SYMBOLrDS(on)VGS(th)BVDSSBVSDSBVGBSID(OFF)IS(OFF)IGSSCgsCgdCdbCissPARAMETERDrain Source ON ResistanceGate Threshold VoltageDrain-Source Breakdown VoltageSource-Drain Breakdown VoltageGate-Body Breakdown VoltageDrain Cuttoff CurrentSource Cutoff CurrentGate-Body LeakageGate-Source (Note 1)Gate-Drain Capacitance (Note 1)Drain-Body Capacitance (Note 1)Input Capacitance (Note 1)13030306010101002.52.5710pFnApAMINMAX1002005VUNITSΩTEST CONDITIONSVGS = 20V, ID = 100µAVGS = 10V, ID = 100µAVGS = VDS, ID = 10µAID = 1µA, VGS = 0IS = 1µA, VGD = VBD = 0IG = 10µA, VSB = VDB = 0VDS = 20V, VGS = 0VSD = 20V, VGD = VBD = 0VGS = 20V, VDS = 0VGB = VDB = VSB = 0, f = 1MHzBody GuardedVGB = 0, VDB = 10V, f = 1MHzVGB = 0, VDB = 10V, VBS = 0, f = 1MHzNOTE 1: For design reference only, not 100% tested.