您好,欢迎来到花图问答。
搜索
您的当前位置:首页Field effect transistor and method for manufacturi

Field effect transistor and method for manufacturi

来源:花图问答
专利内容由知识产权出版社提供

专利名称:Field effect transistor and method for

manufacturing the same

发明人:Noda, Makoto申请号:EP04252673.1申请日:20040507公开号:EP1487028A1公开日:20041215

专利附图:

摘要:A field effect transistor comprises, at least, a channel forming region formed ina semiconductor layer, and a gate electrode provided in face-to-face relation with thechannel forming region via a gate insulating film, wherein the semiconductor layer is

made of a mixture of a semiconductor material layer and conductive particles. The fieldeffect transistor is capable of enhancing a carrier mobility.

申请人:Sony Corporation

地址:7-35, Kitashinagawa 6-chome, Shinagawa-ku Tokyo 141-0001 JP

国籍:JP

代理机构:Smith, Samuel Leonard

更多信息请下载全文后查看

因篇幅问题不能全部显示,请点此查看更多更全内容

Copyright © 2019- huatuowenda.com 版权所有 湘ICP备2023022495号-1

违法及侵权请联系:TEL:199 1889 7713 E-MAIL:2724546146@qq.com

本站由北京市万商天勤律师事务所王兴未律师提供法律服务