专利名称：Field effect transistor and method for
manufacturing the same
发明人：Noda, Makoto申请号：EP04252673.1申请日：20040507公开号：EP1487028A1公开日：20041215
专利附图：
摘要：A field effect transistor comprises, at least, a channel forming region formed ina semiconductor layer, and a gate electrode provided in face-to-face relation with thechannel forming region via a gate insulating film, wherein the semiconductor layer is
made of a mixture of a semiconductor material layer and conductive particles. The fieldeffect transistor is capable of enhancing a carrier mobility.
申请人：Sony Corporation
地址：7-35, Kitashinagawa 6-chome, Shinagawa-ku Tokyo 141-0001 JP
国籍：JP
代理机构：Smith, Samuel Leonard
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