IRFU214PBF资料

IRFR214, IRFU214, SiHFR214, SiHFU214

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)RDS(on) (Ω)Qg (Max.) (nC)Qgs (nC)Qgd (nC)Configuration

VGS = 10 V

8.2250

2.0

FEATURES

•Dynamic dV/dt Rating•Repetitive Avalanche Rated

•Surface Mount (IRFR9210/SiHFR9210)

AvailableRoHS*COMPLIANT•Straight Lead (IRFU9210/SiHFU9210)1.8MM•Available in Tape and Reel4.5

Single

D•Fast Switching•Ease of Paralleling•Lead (Pb)-free Available

DPAK(TO-252)IPAK(TO-251)GDESCRIPTION

Third generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness.

The D-PAK is designed for surface mounting using vaporphase, infrared, or wave soldering techniques. The straightlead version (IRFU/SiHFU series) is for through-holemounting applications. Power dissipation levels up to 1.5 Ware possible in typical surface mount applications.

SN-Channel MOSFET ORDERING INFORMATION

PackageLead (Pb)-freeSnPb

DPAK (TO-252)DPAK (TO-252)IRFR214PbF IRFR214TRLPbFaSiHFR214-E3SiHFR214TL-E3aIRFR214-SiHFR214-DPAK (TO-252)

IRFR214TRPbFaSiHFR214T-E3aIRFR214TRaSiHFR214Ta

DPAK (TO-252)--IRFR214TRRaSiHFR214TRa

IPAK (TO-251)IRFU214PbFSiHFU214-E3 IRFU214SiHFU214

Note

a.See device orientation.

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAETER SYBOLLIITUNITDrain-Source Voltage VDS250

V

20 Gate-Source VoltageVGS ± TC = 25 °C 2.2

Continuous Drain CurrentVGS at 10 VID

ATC = 100 °C 1.4

aIDM 8.8Pulsed Drain Current

Linear Derating Factor0.20W/°C

e Linear Derating Factor (PCB Mount)0.020

EAS 190mJ Single Pulse Avalanche EnergybaIAR 2.2A Repetitive Avalanche CurrentaEAR2.5mJ Repetitive Avalanche Energy

PD25W Maximum Power DissipationTC = 25 °C

eTA = 25 °C PD2.5W Maximum Power Dissipation (PCB Mount)

cdV/dt 4.8V/ns Peak Diode Recovery dV/dt

- 55 to + 150 Operating Junction and Storage Temperature RangeTJ, Tstg

°C

Soldering Recommendations (Peak Temperature)for 10 s260dNotes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.VDD = 50 V, Starting TJ = 25 °C, L = 62 mH, RG = 25 Ω, IAS = 2.2 A (see fig. 12).c.ISD ≤ 2.2 A, dI/dt ≤ 65 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.d.1.6 mm from case.

e.When mounted on 1” square PCB (FR-4 or G-10 Material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91269S-81411-Rev. A, 07-Jul-08

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IRFR214, IRFU214, SiHFR214, SiHFU214

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAETER SYBOLMaximum Junction-to-AmbientMaximum Junction-to-Ambient (PCB Mount)a

Maximum Junction-to-Case (Drain)

RthJARthJARthJC

IN.---TYP.---AX.110505.0

°C/WUNIT

Note

a.When mounted on 1\" square PCB (FR-4 or G-10 material).

SPECIFICATIONS TJ = 25 °C, unless otherwise notedPARAETER SYBOLStaticDrain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance DynamicInput Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge VGS = 0 V, Coss VDS = 25 V,f = 1.0 MHz, see fig. 5Crss Ciss ---140429.6---7.07.6167.04.57.5---8.21.84.5-----nH GTEST CONDITIONS IN.TYP.VGS = 0 V, ID = 250 µA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 µA VGS = ± 20 VVDS = 250 V, VGS = 0 V VDS = 200 V, VGS = 0 V, TJ = 125 °C VGS = 10 VID = 1.3 Ab250-2.0-----0.39-----AX.--4.0± 100252502.0-UNITV V/°C V nA µA ΩS VDS ΔVDS/TJ VGS(th)IGSS IDSS RDS(on) Forward Transconductance MgfsVDS = 50 V, I0.80-D = 1.3 AMMpFQg -MMMID = 2.7 A, VDS = 200 V, Gate-Source Charge Qgs VGS = 10 V -see fig. 6 and 13bGate-Drain ChargeQgd -td(on) VDD = 125 V, ID = 2.7 A, R = 24 Ω, RD = 45 Ω, see fig. 10bGtd(off) tf LD LSBetween lead,6 mm (0.25\") from package and center of die contactDnC Turn-On Delay Time Rise TimeTurn-Off Delay Time Fall Time Internal Drain Inductance Internal Source InductanceDrain-Source Body Diode CharacteristicsContinuous Source-Drain Diode Current Pulsed Diode Forward CurrentaBody Diode VoltageBody Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeForward Turn-On Time------Str ns-ISISMVSDtrrQrrtonMOSFET symbolshowing the integral reversep - n junction diodeD--------1900.652.2A8.82.03901.3VnsµCGSTJ = 25 °C, IS = 2.2 A, VGS = 0 VbTJ = 25 °C, IF = 2.7 A, dI/dt = 100 A/µsbIntrinsic turn-on time is negligible (turn-on is dominated by LS and LD)Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

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Document Number: 91269S-81411-Rev. A, 07-Jul-08

元器件交易网www.cecb2b.com

IRFR214, IRFU214, SiHFR214, SiHFU214

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise notedFig. 1 - Typical Output Characteristics, TC = 25 °CFig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 150 °CFig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91269S-81411-Rev. A, 07-Jul-08

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IRFR214, IRFU214, SiHFR214, SiHFU214

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source VoltageFig. 7 - Typical Source-Drain Diode Forward VoltageFig. 6 - Typical Gate Charge vs. Gate-to-Source VoltageFig. 8 - Maximum Safe Operating Area

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Document Number: 91269S-81411-Rev. A, 07-Jul-08

元器件交易网www.cecb2b.com

IRFR214, IRFU214, SiHFR214, SiHFU214

Vishay Siliconix

VDSVGSRGRDD.U.T.+-VDD10 VPulse width ≤ 1 µsDuty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit

VDS90 %10 %VGStd(on)trtd(off)tfFig. 9 - Maximum Drain Current vs. Case TemperatureFig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91269S-81411-Rev. A, 07-Jul-08

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IRFR214, IRFU214, SiHFR214, SiHFU214

Vishay Siliconix

LVary tp to obtainrequired IASRGVDStpVDSVDDD.U.T.IAS+-VDVDS10 Vtp0.01 ΩIASFig. 12b - Unclamped Inductive Waveforms

Fig. 12a - Unclamped Inductive Test CircuitFig. 12c - Maximum Avalanche Energy vs. Drain CurrentCurrent regulatorSame type as D.U.T.QG12 V0.2 µF0.3 µF50 kΩVGSQGSQGDD.U.T.+-VDSVGVGS3 mAChargeIGIDCurrent sampling resistorsFig. 13a - Basic Gate Charge WaveformFig. 13b - Gate Charge Test Circuit

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Document Number: 91269S-81411-Rev. A, 07-Jul-08

元器件交易网www.cecb2b.com

IRFR214, IRFU214, SiHFR214, SiHFU214

Vishay Siliconix

Peak Diode Recovery dV/dt Test CircuitD.U.T.+Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer-+-+-RG• dV/dt controlled by RG• Driver same type as D.U.T.• ISD controlled by duty factor \"D\"• D.U.T. - device under test+-VDDDriver gate driveP.W.PeriodD = P.W.PeriodVGS = 10 V* D.U.T. ISDwaveformReverserecoverycurrentBody diode forwardcurrentdI/dtD.U.T. VDSwaveformDiode recoverydV/dtVDDRe-appliedvoltageInductor currentBody diode forward dropRipple≤5 %ISD* VGS = 5 V for logic level devicesFig. 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see http://www.vishay.com/ppg?91269.

Document Number: 91269S-81411-Rev. A, 07-Jul-08

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Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000Revision: 18-Jul-08

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